Impactful Study of F-shaped Tunnel FET
نویسندگان
چکیده
In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is and investigated. The impact of thickness the source region lateral tunneling length between oxide edge on analog radio frequency parameters are investigated with appropriate drain through 2D-TCAD tool. slender shape enhanced electric crowding at corners which reflect in terms high ON-current (Ion). Ion device increased up to 10? 4 A/?m reduced sub-threshold swing (SS) 7.3 mV/decade minimum turn-ON voltage (Von = 0.28 V). analog/RF SG-FC-TFET optimized.
منابع مشابه
Analysis of GAA Tunnel FET using MATLAB
In order to improve the energy efficiency of next generation digital systems, transistors withSubthreshold SlopeReferences Q. Zhang, W. Zhao, and A. Seabaugh, "Low-subthreshold-swing tunnel
متن کاملTunnel FET technology: A reliability perspective
Tunneling-field-effect-transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage (VDD) scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/ decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced uni-directional conduction, enhanced on-state Miller capacitanc...
متن کاملCharacterization of Tunnel Fet for Ultra Low Power Analog Applications
In modern portable devices, the supply voltage is decreased to reduce the power dissipation. However as the supply voltage is scaled down below 0.4V, the normal MOSFET devices cannot be used due to lower ION/ IOFF ratio which will reduce the static power dissipation. Hence for low power applications, Tunnel FET is used as alternatives due to their higher sub threshold swing, extremely low off s...
متن کاملInvestigation of a Novel P+n+in+ Tunnel Fet
Tunnel FETs are interesting devices for their steep sub-threshold slopes. In this paper a p+n+in+ tunnel FET is proposed and optimized for a high Ion/Ioff ratio and suitable output characteristics. The proposed tunnel FET has p+in+ structure with a δ-doped n+ region at the beginning of the channel. The proposed structure is extensively studied and the energy bands, transfer characteristics, and...
متن کاملDouble-Gate Tunnel FET With High-κ Gate Dielectric
In this paper, we propose and validate a novel design for a double-gate tunnel fi eld-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the fi rst time, DG Tunnel FET devices, which are using a high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Silicon
سال: 2021
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-021-01319-6